 |
Your search returned 18 records. Click on the hyperlinks to view further details of Titles.. |
|
Magazine Name : Ieee Transactions On Electron Devices
|
Year : 2004 Volume number : 51 Issue: 04 |
Design Optimization Of Allnas-Gainas Hemts For High-Frequency Applications
(Article)
Subject:
Allnas-Gainas
,
Cutoff Frequency
Author:
Javier
Lopez
Tomas
Gonzalez
page:
521
-
528
Thermal Limitations Of Inp Hbts In 80-And 160-Gb Ics
(Article)
Subject:
Heterojunction Bipolar Transistors (Hbts)
,
Indium
Author:
Ian
Harrison
Mattias
Dahlstrom
page:
529
-
534
Self-Consistent Transit-Time Model For A Resonant Tunnel Diode
(Article)
Subject:
Microwaves
,
Millimeter Wave
,
Resonant Tunnel Diode
Author:
Yun
Zheng
Roger
Lake
page:
535
-
541
Characteristics Of A New Bbos With An Algaas- (N+) -Gaas-Inalgap Collector Structure
(Article)
Subject:
Avalanche Multiplication
,
Bulk Barrier
Author:
Feng
Guo
Jing-Yuh
Chen
page:
542
-
547
A Driving Method For High-Speed Addressing In An Ac Pdp Using Priming Effect
(Article)
Subject:
High-Speed Addressing
,
Plasma Display Panel
Author:
Jae Sung
Kim
Jin Ho
Yang
page:
548
-
553
Effect Of Mobile Charge On Hot-Carrier Degradation In Lateral Diffused Mosfet
(Article)
Subject:
Hot Carrier Degradation
,
Hot-Hole
Author:
T.
Wei
page:
554
-
559
Sequential Lateral Solidification Processing For Polycrystalline Si Tfts
(Article)
Subject:
Sequential Lateral Solidification
Author:
Mark A.
Crowder
Tolis
Voutas
page:
560
-
568
Two-Dimensional Analytical Modeling Of Fully Depleted Dmg Soi Mosfet And Evidence For Diminished Sces
(Article)
Subject:
Device Scaling
,
Insulated Gate Bipolar Transistors
Author:
Jagadesh
Kumar
Anurag
Chaudhry
page:
569
-
574
Direct Tunneling-Induced Floating - Body Effect In 90-Nm Pseudo-Kink-Free Pd Soi Pmosfets With Dtmos-Like Behavior And Low Input Power Consumption
(Article)
Subject:
Direct Tunnelling
,
Dynamic-Threshold Mos
Author:
Shiao-Shien
Chen
Shiang
Huang-Lu
page:
575
-
580
The Effect Of Annealing Temperatures On Self-Ailned Replacement (Damascene) Tacn-Tan-Stacked Gate Pmosfets
(Article)
Subject:
Carbon
,
Metal Gate
,
Pmosfets
Author:
J
Pan
Christy
Woo
page:
581
-
586
A Compact Threshold Voltage Model For Gate Misalignment Effect Of Dg Fd Soi Nmos Devices Considering Fringing Electric Field Effects
(Article)
Subject:
Device Modeling
,
Mos
Author:
Elvis C.
Sun
James B.
Kuo
page:
587
-
596
A Novel Monos-Typenonvolatile Memory Using High- Dielectric For Improved Data Retention And Programming Speed
(Article)
Subject:
Hfo2
,
High-Dielectric
,
Nonvolatile
,
Silicon
Author:
Wang
Xuguang
J.
Liu
page:
597
-
602
Real Impact Of Dynamic Operation Stress During Burn-In On Dram Retention Time
(Article)
Subject:
Gate-Induced Drain Leakage
,
Retention Time
Author:
Ii-Gweon
Kim
Se-Kyeong
Choi
page:
603
-
608
Thermally Robust Hfn Metal As A Promising Gate Electrode For Advanced Mos Device Applications
(Article)
Subject:
Cmos Device
,
Hfn
,
Metal Gate
Author:
Hong
Yu Yu
Ming-Fu
Li
page:
609
-
615
Analysis Of Transient Response And Operating Speed Of Mobile
(Article)
Subject:
Monostable-Bistable
,
Operating Speed
Author:
Hideaki
Matsuzuki
Hiroyuki
Fukuyama
page:
616
-
622
Hot-Carrier Degradation Phenomena In Lateral And Vertical Dmos Transistors
(Article)
Subject:
Charge Pumping (Cp)
,
Hot Carriers
,
Lateral Integrated Dmos
Author:
Peter
Moens
Van Den
Bosch
page:
623
-
628
Turn-Off Switching Analysis Considering Dynamic Avalanche Effect For Low Turn-Off High-Voltage Igbts
(Article)
Subject:
Insulated Gate Bipolar Transistors
,
Power Semiconductor Devices
Author:
T
Ogura
Hiroyuki
Ninomiya
page:
629
-
635
4.5-Kv Injection-Enhanced Gate Transistors (Iegts) With High Turn-Off Ruggedness
(Article)
Subject:
Insulated Gate Bipolar Transistors (Igbts)
,
Power Semiconductor Switches
Author:
T
Ogura
Hideaki
Ninomiya
page:
636
-
641
|
|
| | |
